专利名称：IMPLANT DAMAGE CONTROL BY IN-SITU C
DOPING DURING SIGE EPITAXY FOR DEVICE
APPLICATIONS
发明人：Jin Ping LIU,Judson Robert HOLT
申请号：US14182242
捐书活动申请日：20140217
圣诞老人英语
五味子功效与作用是什么公开号：US20140159113A1
公开日：
部落冲突夜世界
团结一心的图片
小时代郭采洁
20140612洗碗机排行>水牛英语
专利内容由知识产权出版社提供
专利附图：
摘要：Some example embodiments of the invention compri methods for and
miconductor structures comprid of: a MOS transistor comprid of source/drain
regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subquent heat processing.
申请人：GLOBALFOUNDRIES Singapore Pte. Ltd.
地址：Singapore SG
国籍：SG
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