Plasma doping method

更新时间:2023-07-31 12:42:31 阅读: 评论:0

专利名称:Plasma doping method
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发明人:Yuichiro Sasaki,Katsumi Okashita,Hiroyuki
Ito,Bunji Mizuno
申请号:US12158852
申请日:20071113
公开号:US07790586B2
脸的英语公开日:
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专利附图:
踏青节摘要:An impurity region is formed in a surface of a substrate by exposing the
substrate to a plasma generated from a gas containing an impurity in a vacuum chamber.In this process, a plasma doping condition is t with respect to a do of the impurity to
be introduced into the substrate so that a first one of dos in a central portion and in a peripheral portion of the substrate is greater than a cond one of the dos during an initial period of doping, with the cond do becoming greater than the first do thereafter.
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申请人:Yuichiro Sasaki,Katsumi Okashita,Hiroyuki Ito,Bunji Mizuno
地址:Osaka JP,Osaka JP,Chiba JP,Nara JP
国籍:JP,JP,JP,JP
代理机构:McDermott Will & Emery LLP
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