专利名称：INDUCTIVE PLASMA DOPING
发明人：Simon Su-Horng LIN,Chi-Ming Yang,Chyi
摩羯男和白羊女Shyuan Chern,Chin-Hsiang Lin
申请号：US12347483
食品安全申请日：20081231
公开号：US20100167506A1拙政园简介
公开日：
20100701
专利内容由知识产权出版社提供
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摘要：In some embodiments, a method of doping a miconductor wafer dispod on a pedestal electrode in an inductive plasma chamber includes generating a plasma having a first voltage with respect to ground in the inductive plasma chamber, and applying a
radio frequency (RF) voltage with respect to ground to the pedestal electrode in the inductive plasma
chamber. The positive RF voltage is bad on the first voltage of the plasma.
怎么写征文申请人：Simon Su-Horng LIN,Chi-Ming Yang,Chyi Shyuan Chern,Chin-Hsiang Lin 地址：Hsinchu City TW,Hsian-San District TW,Taipei TW,Hsin-chu TW
山东风俗国籍：TW,TW,TW,TW
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