N-CHANNEL ENHANCEMENT MODE Electronics Corp.
POWER MOSFET ▼ Simple Drive Requirement BV DSS 30V ▼ SO-8 Compatible with Heatsink R DS(ON) 3.3m Ω▼ Low On-resistance
I D
105A
日本书▼ RoHS Compliant
Description
□
Absolute Maximum Ratings
Symbol Units V DS V V GS
V I D @T C =25℃A I
D @T A =25℃A I D @T
A =70℃A I DM
A P D @T C =25℃W P D @T A =25℃W E AS Single Pul Avalanche Energy 4mJ T STG ℃T J
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Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-ca 2.2℃/W Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
25
℃/W
Data & specifications subject to change without notice 200810171
Total Power Dissipation 56.81
Storage Temperature Range
下午英文
win7自动关机Operating Junction Temperature Range
-55 to 150-55 to 150
Total Power Dissipation 28.8Thermal Data
Parameter
Gate-Source Voltage
+20Continuous Drain Current 331Continuous Drain Current (Chip)Continuous Drain Current 325Puld Drain Current 1250Parameter
Rating Drain-Source Voltage 30AP3R303GMT-HF
5Halogen-Free Product
105Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
企业家语录S
PMPAK 5x6
Electrical Characteristics@T j=25o C(unless otherwi specified) Symbol Parameter Test Conditions Min.Typ.
Max.Units
BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=250uA30--V R DS(ON)Static Drain-Source On-Resistance2V GS=10V, I D=30A-- 3.3mΩ
V GS=4.5V, I D=20A--5mΩV GS(th)Gate Threshold Voltage V DS=V GS, I D=250uA1-3V g fs Forward Transconductance V DS=10V, I D=20A-60-S
春联集锦I DSS Drain-Source Leakage Current V
DS
=30V, V GS=0V--1uA
I GSS Gate-Source Leakage V
GS
=+20V--+100nA Q g Total Gate Charge2I D=30A-13.321nC Q gs Gate-Source Charge V DS=15V- 2.5nC Q gd Gate-Drain ("Miller") Charge V GS=4.5V-7.2nC t d(on)Turn-on Delay Time2V DS=15V-8-ns t r Ri Time I D=1A- 5.5-ns t d(off)Turn-off Delay Time R G=3.3Ω,V GS=10V-25-ns t f Fall Time R D=15Ω-17-ns C iss Input Capacitance V GS=0V-14002240pF C oss Output Capacitance V DS=25V-440-pF C rss Rever Transfer Capacitance f=1.0MHz-170-pF R g Gate Resistance f=1.0MHz- 1.4 2.1ΩSource-Drain Diode
Symbol Parameter Test Conditions Min.Typ.Max.Units V SD Forward On Voltage2I S=30A, V GS=0V-- 1.2V t rr Rever Recovery Time2I S=10A, V GS=0V,-35-ns Q rr Rever Recovery Charge dI/dt=100A/µs-32-nC Notes:
1.Pul width limited by Max. junction temperature
2.Pul test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10c, 60o C/W at steady state.
4.Starting T j=25o C , V DD=25V , L=0.1mH , R G=25Ω , I AS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAU
TION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2 AP3R303GMT-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristic of
Rever Diode
Junction Temperature
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AP3R303GMT-HF
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP3R303GMT-HF
