ANPEC rerves the right to make changes to improve reliability or manufacturability without notice, and advi customers to obtain the latest version of relevant information to verify before placing orders.Pin Description
Ordering and Marking Information
Features
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
SO − 8
• -30V/-4.6A, R DS(ON) = 52m Ω(typ.) @ V GS = -10V
R DS(ON) = 80m Ω(typ.) @ V GS = -4.5V
• Super High Density Cell Design • Reliable and Rugged • SO-8 Package
蜗杆参数Absolute Maximum Ratings (T A = 25°C unless otherwi noted)
S S S G
D
D D D P-Channel MOSFET
G
A P M 9435
H a n d lin g C o d e T e m p. R a n g e P a c k a g e C o d e
P a c k a g e C o d e K : S O -8
O p e ra tio n J u n c tio n T e m p. R a n g e C : -55 to 150°C H a n d lin g C o d e T U : T u b e
T R : T a p e & R e e l
A P M 9435
供财神
A P M 9435X X X X X
X X X X X - D a te C o d e
Electrical Characteristics (T A = 25°C unless otherwi noted)
Absolute Maximum Ratings (T A = 25°C unless otherwi noted)
Notes
a : Guaranteed by design, not subject to production testing b
: Pul test ; pul width ≤300µs, duty cycle ≤ 2%
0.0
2.5楼层英文
5.0
7.510.012.515.017.520.00.000.020.040.060.080.100.120.14
0.16
0246810
510
1520
-50
-
250255075100125150
0.000.250.500.751.001.251.50
12345
5
10
15
20
Typical Characteristics
-I D -D r a i n C u r r e n t (A )
Transfer Characteristics
-V GS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction T emperature
Tj - Junction T emperature (°C)-V G S (t h )-T h r e s h o l d V o l t a g e (V )(N o r m a l i z e d )
On-Resistance vs. Drain Current
-
I D - Drain Current (A)
R D S (o n )-O n -R e s i s t
家具的英语a n c e (Ω)
Output Characteristics
-I D -D r a i n C u r r e n t (A )
-V DS
- Drain-to-Source Voltage (V)
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200400600800
12345678910
0.00
0.050.100.150.200.25
0.30
0510152025
利益相关者理论02
4
6
8
石燕子10
-50
-250255075100125150
0.000.25
0.500.751.001.251.501.752.00
Typical Characteristics
-V GS - Gate-to-Source Voltage (V)
R D S (o n )-O n -R e s i s t a n c e (Ω)
On-Resistance vs. Gate-to-Source Voltage
R D S (o n )-O n -R e s i s t a n c e (Ω)(N o r m a l i z e d )On-Resistance vs. Junction Temperature
T J - Junction T emperature (°C)
-V DS - Drain-to-Source Voltage (V)
Capacitance
C a p a c i t a n c e (p F )
Gate Charge
Q G - Gate Charge (nC)-V G S -G a t e -S o u r c e V o l t a g e (V )
0.01
0.1110010
203040
50
60
70
8030
1E-4
1E-30.010.11100.010.1
1
30
0.00.20.40.60.8 1.0 1.2 1.4 1.6 1.80.1
1
10
20
热爱祖国演讲稿Typical Characteristics
Single Pul Power Time (c)
Square Wave Pul Duration (c)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
T h e r m a l I m p e d a n c e
Normalized Thermal Transient Impedence, Junction to Ambient
P o w e r (W )
昭君出塞的故事Source-Drain Diode Forward Voltage
-V SD -Source-to-Drain Voltage (V )
-I S -S o u r c e C u r r e n t (Α)
