Parameter
Max.
Units
泰迪狗的名字>投影仪系统I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 169 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 118 A I DM
Puld Drain Current 680P D @T C = 25°C Power Dissipation 330W Linear Derating Factor 2.2W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pul Avalanche Energy 560
mJ I AR Avalanche Current
See Fig.12a, 12b, 15, 16
A E AR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 conds 300 (1.6mm from ca )°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
HEXFET ® Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET ® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. The benefits combine to make this design an extremely efficient and reliable device for u in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
Description
3/25/01
1
q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating
q 175°C Operating Temperature q Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
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AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
Max.
Units
R θJC Junction-to-Ca
我的偶像妈妈–––0.45°C/W
R θCS Ca-to-Sink, Flat, Gread Surface 0.50–––R θJA
Junction-to-Ambient
–––
62
TO-220AB
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IRF1405
Typical Applications
q Electric Power Steering (EPS)q Anti-lock Braking System (ABS)q Wiper Control q Climate Control q
Power Door
IRF1405
IRF1405
IRF1405月的成语开头
终止合同协议IRF1405
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