AO4620 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 us advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be ud in inverter and other applications.
Features
n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) 100% UIS tested 100% Rg tested p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) < 55mΩ (VGS = -4.5V)
苏炳添作文素材
SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 Pin1 G1 S1 D2 D1
n-channel Max p-channel -30 ±20 -5.3 -4.5 -40 2 1.44 17 43 -55 to 150
p-channel Units V V A
Absolute Maximum Ratings TA=25° unless otherwi noted C Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current F Puld Drain Current Power Dissipation Avalanche Current
F B B B
VGS TA=25° C TA=70° C TA=25° C C TA=70° ID IDM PD IAR EAR TJ, TSTG
±20 7.2 6.2 64 2 1.44 9 12 -55 to 150
W A mJ ° C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead
低血糖的治疗
Symbol RθJA RθJL RθJA RθJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 50 80 32 50 80 32
Max 62.5 100 40 62.5 100 40
Units ° C/W ° C/W ° C/W ° C/W ° C/W ° C/W
Alpha & Omega Semiconductor, Ltd.
AO4620
N-CHANNEL Electrical Characteristics (TJ=25° unless otherwi noted) C Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.2A RDS(ON) gFS VSD IS ISM Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance Diode Forward Voltage Puld Body-Diode Current
B
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
1 5 100 1.5 64 17.7 TJ=125° C 25 24.8 20 0.74 1 2.5 64 373 448 24 32 36 2.1 2.6
认错µA nA V A mΩ mΩ S V A A pF pF pF
VDS=5V, ID=7.2A IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Rever Tran
sfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, f=1MHz
67 41 1.8 7.2 2.8 11
Ω nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Ri Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Rever Recovery Time IF=7.2A, dI/dt=100A/µs Body Diode Rever Recovery Charge IF=7.2A, dI/dt=100A/µs VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω VGS=10V, VDS=15V, ID=7.2A
3.5 1.3 1.7 4.5 2.7 14.9 2.9 10.5 4.5 12.6
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the ur's specific board design. The current rating is bad on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pul width limited by junction temperature. C. The R θJA is the sum of the thermal
impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs puls, duty cycle 0.5% max. E. The tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pul rating. F.The power dissipation and current rating are bad on the t ≤ 10s thermal resistance rating. Rev 8: May 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4620麦囤
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 10V 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 45 VGS=4.
5V VGS=4.5V 30 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=10V Normalized On-Resistance 40 35 RDS(ON) (mΩ ) Ω 5V 6V 12 6V 15 VDS=5V VDS=5V
带虎字的成语4.5V ID(A)
9
6 VGS=3.5V 3 125°C 125°C 25°C 25°
0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V Id=7.7A
VGS=4.5V Id=5A
60 ID=7.2A ID=7.7A 50 RDS(ON) (mΩ ) Ω 40 125°C 125° IS (A)
1.0E+01 1.0E+00 1.0E-01 125°C
1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 2 8 VDS=15V VDS=15V ID=7.2A ID=7.7A Capacitance (pF) 600 500 400 300 200 100 0 0 Crss Crss 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 30 Coss Coss Ciss
100.0 10µs 10.0 ID (Amps) RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C DC 0.1s 10s Power (W)
30 25 20 15 10 5 0 0.01 0.1 1 VDS (Volts) 10 100 0.001 1 10 100 1000 Pul Width (s) Figure 10: Single Pul Power Rating Junction-toAmbient (Note E) 0.01 0.1 TJ(Max)=150°C TA=25°C
0.0
Figure 9: Maximum Forward Biad Safe Operating Area (Note E)
10 Zθ JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pul
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pul
0.01 0.00001 0.0001 0.01 0.1 1 10 Pul Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 100 1000
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL Electrical Characteristics (TJ=25° unless otherwi noted) C Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-5.3A RDS(ON) gFS VSD IS ISM Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.5A Forward Transconductance Diode Forward Voltage Puld Body-Diode Current
B
Min -30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
-1 -5 ±100 -1.3 -40 23 TJ=125° C 31.5 33 19 -0.8 -1 -3.5 -40 760 55 32 -1.85 -2.4
µA nA V A mΩ mΩ S V A A pF pF pF
VDS=-5V, ID=-5.3A IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Rever Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz
140 95 3.2 13.6 5 16
Ω nC nC nC nC ns ns ns ns ns nC
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Ri Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Rever Recovery Time IF=-5.3A, dI/dt=100A/µs
1in 2
VGS=-10V, VDS=-15V, ID=-5.3A
6.7 2.5 3.2 8
VGS=-10V, VDS=-15V, RL=2.8Ω, RGEN=3Ω
6 17 5 15 9.7
Body Diode Rever Recovery Charge IF=-5.3A, dI/dt=100A/µs
故人西辞黄鹤楼A: The value of R θJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the ur's specific board design. The current rating is bad on the t ≤ 10s thermal resistance rating. B: Repetit
ive rating, pul width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs puls, duty cycle 0.5% max. E. The tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pul rating. F.The current rating is bad on the t ≤ 10s thermal resistance rating. Rev8: May 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 -4V 25 -ID (A) 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V Normalized On-Resistance VGS=-3V 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -ID(A) 20 15 10 125°C 25°C -10V -6V -5V -4.5V 25
30
VDS=-5V
50 45 40 RDS(ON) (mΩ ) Ω 35 30 25 20 15 10 0
1.8 VGS=-4.5V 1.6 1.4 1.2 1 0.8 ID=-5.6A VGS=-4.5V ID=-4.5A VGS=-10V ID=-5.3A ID=-4.5A
VGS=-10V VGS=-10V
5
10
15
20
0
25
50
75
敏感
100
125
150
175
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
脑栓通80 ID=-5.6A ID=-5.3A 60 RDS(ON) (mΩ ) Ω 125°C 40 25°C 20 25°C 125°C -IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125°C
25°C
0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
