Electrical Characteristics of DIODE T
C = 25°C unless otherwi noted
I GES G-E Leakage Current V GE = V GES, V CE = 0V ----± 100nA
On Characteristics
V GE(th)G-E Threshold Voltage I C = 80mA, V CE = V GE 3.5 4.5 6.5V
V CE(sat)Collector to Emitter
Saturation Voltage
I C = 80A, V GE = 15V-- 2.1 2.6V
I C = 160A, V GE = 15V-- 2.6--V怀孕了多久才能用验孕棒测出来
Dynamic Characteristics
C ies Input Capacitance出师不利的意思
责任落实到人V CE = 30V, V GE = 0V,
f = 1MHz --5000--pF
C oes Output Capacitance--600--pF C res Rever Transfer Capacitance--200--pF
Switching Characteristics
t d(on)Turn-On Delay Time
V CC = 300 V, I C = 80A,
R G = 3.9Ω, V GE=15V
Inductive Load, T C = 25°C --40--ns
t r Ri Time--101--ns t d(off)Turn-Off Delay Time--90130ns t f Fall Time--75150ns E on Turn-On Switching Loss--2500--uJ E off Turn-Off Switching Loss--1760--uJ E ts Total
Switching
Loss--42605000uJ
t d(on)Turn-On Delay Time
V CC = 300 V, I C = 80A,
R G = 3.9Ω, V GE = 15V
Inductive Load, T C = 125°C --45--ns
t r Ri Time--105--ns t d(off)Turn-Off Delay Time--140200ns t f Fall Time--122250ns E on Turn-On Switching Loss--2785--uJ E off Turn-Off Switching Loss--3100--uJ E ts Total妨是什么意思
Switching
Loss--5885--uJ
Q g Total Gate Charge
V CE = 300 V, I C = 80A,
V GE = 15V --345520nC
Q ge Gate-Emitter Charge--60100nC Q gc Gate-Collector Charge--95150nC L e Internal Emitter Inductance Measured 5mm from PKG--18--nH
Symbol Parameter Test Conditions Min.Typ.Max.Units
V FM Diode Forward Voltage I F = 25A T C = 25°C-- 1.4 1.7
V T C = 100°C-- 1.3--
t rr Diode Rever Recovery Time
I F = 25A,
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di/ dt = 200 A/us T C = 25°C--5095
ns T C = 100°C--105--
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Current
T C = 25°C-- 4.510
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A
T C = 100°C--8.5--
Q rr Diode Rever Recovery Charge T C = 25°C--112375
nC T C = 100°C--420--
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