专利名称：Heterostructure Including a Composite
Semiconductor Layer
发明人：Maxim S. Shatalov,Rakesh Jain,Jinwei
Yang,Alexander Dobrinsky,Michael
Shur,Remigijus Gaska
蔡京子孙申请号：US14519230
荐福寺申请日：20141021关于奋斗的名言
公开号：US20150108428A1
公开日：
20150423硬件测试工程师
中国航母名字
专利内容由知识产权出版社提供
专利附图：
摘要：A heterostructure for u in an electronic or optoelectronic device is provided.
The heterostructure includes one or more composite miconductor layers. The composite miconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite miconductor layer can be porous, continuous, or partially continuous.
申请人：Sensor Electronic Technology, Inc.
赞美男人的句子
地址：Columbia SC US垂的笔画
国籍：US
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