专利名称：SiGe source/drain structure and preparation
method thereof
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发明人：Qiuming Huang,Jun Tan,Qiang Yan我最喜欢的一堂语文课作文
申请号：US15390528
申请日：20161225
秘密花园主要内容公开号：US10134900B2
公开日：
20181120
专利内容由知识产权出版社提供耳朵按摩
专利附图：蓍草占卜
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摘要：A structure of SiGe source/drain and a preparation method thereof are
disclod in the prent invention. Firstly, providing a miconductor single crystal silicon substrate. Secondly, etching the miconductor single crystal silicon substrate to form
recess on both sides of the gate. Thirdly, epitaxially growing a SiGe ed layer and a SiGe bulk layer in the recess in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gas. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the prent invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subquent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.
申请人：SHANGHAI HUALI MICROELECTRONICS CORPORATION崩溃的说说
地址：Shanghai CN教师网络学习
国籍：CN
代理机构：Tianchen LLC
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