专利名称：Semiconductor metrology target and
manufacturing method thereof
游泳怎么画
发明人：Long-Yi Chen,Jia-Hong Chu,Hsin-Chin
万同Lin,Hsiang-Yu Su,Yun-Heng Tng,Kai-Hsiung
小斑马Chen,Yu-Ching Wang,Po-Chung Cheng,Kuei-
Shun Chen,Chi-Kang CHang
我的科技梦申请号：US15692151
南方小年是哪一天
申请日：20170831
公开号：US10204867B1
公开日：
20190212
专利内容由知识产权出版社提供
专利附图：
摘要：A metrology target of a miconductor device is provided. The metrology target includes a substrate including first and cond layers. The first layer includes a first grating, a cond grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the cond grating. The cond layer is formed over the first layer and includes a third grating and a fourth grating. The first, cond, third and fourth gratings are formed bad on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and cond grating, respectively. The first grating and the third grating are formed with a first positional offt which is along a first direction. The cond grating and the fourth grating are formed with a cond positional offt which is along a cond direction which is opposite to the first direction.
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
一句精彩结束语大全
地址：Hsinchu TW
ntosa国籍：TW
代理机构：McClure, Qualey & Rodack, LLP
更多信息请下载全文后查看
>烧猪蹄的家常做法
