SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

更新时间:2023-07-23 16:52:10 阅读: 评论:0

专利名称:SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
男qq头像发明人:MOTONAMI KAORU
大米发糕的做法申请号:JP15266089溥仪父亲
申请日:19890614
韩女主播公开号:JPH0318028A口头表达能力训练
公开日:
心理c证
一览无余什么意思
19910125
取得成功的英语专利内容由知识产权出版社提供
摘要:PURPOSE:To form a contact hole having a small aspect ratio when upper interconnections are formed by forming the side part of the side near at least a through hole or the contact hole in the ctional shape of lower interconnections in a smooth slope state. CONSTITUTION:Lower interconnections 13, the side parts 13c, 13b of the sides of which are formed at least near a contact hole 15 in a relatively smooth slope state, are lectively formed on a miconductor substrate 11 through an insulating film 12. Simultaneously, upper interconnections 16 are lectively formed through the hole 15 opened at an interlayer insulating film 14 covering the interconnections 13. Accordingly, the surface of the film 14 having a satisfactory step coverage corresponding to the hole 15 is formed in a relatively smooth slope state between the interconnections 13. Thus, the hole having a small aspect ratio can be formed in connection to the smoothed surface at the time of opening the hole by lective etching, and the upper interconnections can be formed desirably and completely.
申请人:MITSUBISHI ELECTRIC CORP
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