SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREO

更新时间:2023-07-23 16:39:35 阅读: 评论:0

专利名称:SEMICONDUCTOR DEVICE AND
会计的重要性FABRICATION METHOD THEREOF
发明人:Xuemei WANG,Fugang CHEN,Yun XUE
申请号:US16739431团员自我鉴定
拱手而降
申请日:20200110
公开号:US20200251589A1
公开日:
20200806
专利内容由知识产权出版社提供
西王母专利附图:
摘要:The prent disclosure provides a miconductor device and a fabrication method. The miconductor device includes: a substrate; a first well region in the
substrate, having first ions; an isolation layer in the first well region; a cond well region
and a third well region, formed in the first well region, located respectively on opposite sides of the isolation layer, having cond ions with an opposite conductivity type as the first ions, and with a minimum distance from the isolation layer greater than zero; a first gate structure on the cond well region and the first well region; a cond gate structure on the third well region and the first well region; a barrier gate on the isolation layer, located between the first gate structure and the cond gate structure, and having the cond ions; and source-drain doped layers in the cond well region and the third well region, respectively.
申请人:Semiconductor Manufacturing International (Shanghai)
股票止损>用自言自语造句Corporation,Semiconductor Manufacturing International (Beijing ) Corporation 地址:Shanghai CN,Beijing CN
蒲岐水果国籍:CN,CN
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