专利名称：SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
发明人：MIYASHITA MUNEHARU电路基础
申请号：JP10785891
申请日：19910514
公开号：JPH04336465A中国神曲
人寿保险意外险公开日：
全晋会馆名人名言经典19921124
大雨图片专利内容由知识产权出版社提供
李俊琪摘要：PURPOSE:To obtain a planar quantum fine line in a groove formed in a miconductor substrate without causing a step on the surface of a multilayer miconductor. CONSTITUTION:A groove 1a is formed in a first type miconductor substrate 1 and thin a cond type miconductor layer 2 having lower electron affinity than the first type miconductor, a first type highly resistive miconductor layer 3 and a cond type miconductor layer 2 are laminated quentially on the side face and the bottom of the groove 1a so that the groove 1a is buried thus forming a layer structure. A cond n-type doped miconductor layer 4 is then formed on the surface including the top face of the groove 1a. Since no step exist on the surface after formation of quantum fine line, following steps including photolithographic step are simplified resulting in a high performance miconductor device.
申请人：MITSUBISHI ELECTRIC CORP
更多信息请下载全文后查看心里压抑怎么办
