专利名称：PROCESSED WAFER AND PROCESSING
METHOD THEREOF
发明人：Shengyu Yang,Minghui Fang,Lin Lu,Shihwei
优秀是一种习惯黄山奇石教学反思Huang,Shaobin Chen
申请号：US17679635
一线生机申请日：20220224
公开号：US20220178049A1
公开日：
什么是高效课堂
20220609
专利内容由知识产权出版社提供
荥阳会谱
护肤步骤的正确步骤专利附图：
摘要：A procesd wafer includes an outer surface, and a treated portion having a depth of 0 to 50 μm measured from the outer surface. At least a part of the treated
桂心的功效与作用portion has an oxygen concentration of less than 13 wt %. A method for processing a wafer includes the steps of: applying a reducing medium on the wafer, the reducing medium is in powder form and including a reducing agent, and at least one of a catalyst and a releasing agent; subjecting the wafer to a reduction reaction at a temperature below Curie temperature of the and under a non-oxidizing atmosphere so as to obtain the aforesaid procesd wafer.
世界读书日手抄报申请人：Fujian Jing'an Optoelectronics Co., Ltd.
地址：Quanzhou City CN
国籍：CN
更多信息请下载全文后查看
