我为你受冷风吹专利名称：Charged device mode ESD protection circuit 发明人：Ming-Dou Ker
申请号：US08/804579
申请日：19970224
公开号：US05901022A
公开日：
19990504
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毛毛虫英文摘要：An ESD protection circuit for deep-submicron CMOS IC's provides Charged-Device Model (CDM) protection in addition to Human-Body Model (HBM) and Machine Model (MM) ESD events. An on-chip inductor is connected in ries between a conventional ESD protection circuit and the thin gate oxide of a charged-device IC input stage. The inductor provides a voltage drop effect, a current limitation effect, and a time delay effect to prevent the CDM ESD current from being discharged through the thin gate oxide of the input stage IC. The inductor cooperates with traditional input ESD protection circuits to enable full ESD protection against all HBM, MM, and CDM ESD events. The inductor can be implemented in a square spiral layout structure of metal and/or poly, and can be placed directly under the input bonding pad, so as not to increa the total layout area of the input pad and input ESD protection circuits.
朱莉的电影
申请人：INDUSTRIAL TECHNOLOGY RESEARCH INST.
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代理机构：Proskauer Ro LLP
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