MANUFACTURE OF SEMICONDUCTOR DEVICE

更新时间:2023-07-18 05:39:16 阅读: 评论:0

天上的白云
专利名称:MANUFACTURE OF SEMICONDUCTOR DEVICE
发明人:HATAISHI OSAMU,SUGISHIMA KENJI
六月成人网申请号:JP1686180
北伐战争时期申请日:19800214
公开号:JPS56114315A
公开日:
不忘初心议论文
19810908
高山雪莲专利内容由知识产权出版社提供
神奇秘谱搞笑的新年祝福摘要:PURPOSE:To flatten the surface of the titled device without scratches assuredly by fusing the surface of a miconductor substrate with a lar or electron beam. CONSTITUTION:An abnormal protrusion 2 and the vicinity thereof on an Si substrate 1 are fud by the irradiation of the lar beam 3 of ruby, Ar, and the like, and flattened 4. Or, if the electron beam 5 is irradiated, the large diameter is obtained. Therefore the entire surface is subjected to irradiation, and all the abnormal protrusions are fud and flattened simultaneously. In this constitution, the substrate surface is flattened without damages, the scratches on the photomask are reduced, and the break of Al wirings can be avoided.
申请人:FUJITSU LTD
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