SPUTTERING DEVICE

更新时间:2023-07-16 13:26:56 阅读: 评论:0

混合运算题二年级
清明团专利名称:SPUTTERING DEVICE
发明人:SUZUKI YASUMICHI,SAITO YUTAKA,SANO HIDEZO,SHIMIZU TAMOTSU,AIUCHI
SUSUMU
申请号:JP14467085
海底世界简笔画>育儿园
铃儿响叮当教案申请日:19850703
公开号:JPS627853A
公开日:
19870114
专利内容由知识产权出版社提供
摘要:PURPOSE:To provide the titled device which generates plasma by microwaves and which decreas the thermal stress of a target and has a high film forming rate and target utilizing rate by respectively specifically providing a cavity part to the substrate side and magnets to a microwave generating source and target side. CONSTITUTION:The cavity part 4 facing the target 1 is provided to the substrate 5 side of the sputtering device having a cathode 2 which is impod on the target 1 facing the substrate 5 and to which electric power is impresd by a power source 9 and a microwave generating source 13. The magnet 3 is dispod on the rear side of the cathode 2 and the magnets 14, 15 are dispod to the outside at both ends of a waveguide 10 on the generating source 13 side. The magnetic lines 16 of force of the magnets 14, 15 are made opposite in the direction from the magnet 3 and the intensity of the magnetic field of the magnet 15 is made stronger in intensity than the magnetic field of the magnet 14. The high-density plasma generated by using microwaves having the magnetic fields is thereby transported over the entire surface of the target 1 along the magnetic lines of force generated by the magnets 14, 15 and is confined between the target 1 and the substrate
hawall>新叶村5.
申请人:HITACHI LTD
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如故是什么意思

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