值此新春佳节专利名称：Production manner null
发明人：KAMATA YORIO，鎌田 順夫,KAWAGUCHI KAZUYUKI，川口 和志
申请号：JP特願昭61-58056
申请日：19860318
白菜包子
公开号：JP特公平7-3834B2
公开日：
自然角观察记录表
丁小猫
19950118
专利内容由知识产权出版社提供
摘要：PURPOSE:To eliminate an interlayer insulating film from being polished to decrea its withstanding voltage in the step of forming multilayer interconnection by forming a silicon nitride grown by a plasma having low polishing rate as a stopper when burying aluminum in an electrode window by utilizing the polishing. CONSTITUTION:First layer wirings 12 are formed similarly to a conventional example on a ba such as a silicon substrate 11, phosphorus, silicate glass (PSG) is grown 1.0mum thick, and the surface is flattened. A silicon nitride film 16 is formed approx. 1,000Angstrom thick on an insulating film 13, and a plasma growth method which can be executed at approx. 450 deg.C is ud to grow it. An electrode window 14 is formed at next stage, an aluminum film 15 is formed 1.5mum thick, and the film 15 is polished. Thus, the silicon nitride film is formed to polish it without affecting the distribution of the polishing to improve the working efficiency, thereby preventing the PSG from being polished not to impair interlayer withstanding voltage characteristics.
申请人：FUJITSU LTD，富士通株式会社插叙
地址：神奈川県川崎市中原区上小田中1015番地按摩手法大全
钱梦龙鸡毛毽子图片
国籍：JP
代理人：大菅 義之
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