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小拇指戴戒指专利名称：SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
发明人：OSAWA AKIRA,IKUSHIMA MASAO
孔子的后人
申请号：JP10360287
直开头的成语
申请日：19870427
公开号：JPS63269395A五字对联大全
微信拜年公开日：
19881107
专利内容由知识产权出版社提供
黄山高>席绢摘要：PURPOSE:To hold substrate bias potential at a negative value, by providing a negative undershoot detector on an output terminal or an input/output common terminal, and controlling a substrate bias generator by the output of the detector. CONSTITUTION:A negative undershoot input detector 10 is constituted by connecting commonly the drains of MOS transistors 11 and 12. The generating point of the output of the undershoot input detector 10 is connected to the input point of a waveform arranging circuit 15. And when negative potential exceeding the threshold values of the MOS transistors 11 and 12 is impresd on the input terminal or the input/output common terminal of a miconductor device, a current flows on the negative undershoot detector 10 consisting of the MOS transistors 11 and 12 and a load means, then, the output level of the detector is inverted. In such a way, a cond substrate bias generator having a large current driving capacity is started up by utilizing the change of the output, and substrate biasing can be prevented from being applied lightly.
申请人：MATSUSHITA ELECTRONICS CORP
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