60V N-Channel MOSFET General Features
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Ultra-low Miller Charge
R DS(ON),typ.=9.7 m Ω@V GS =10V
Low Gate Charge Minimize Switching Loss Improved ESD Capability Fast Recovery Body Diode思廉
Applications
High efficiency DC/DC Converters Synchronous Rectification Motor Drive
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Absolute Maximum Ratings
T C =25℃ unless otherwi specified
SOP-8
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Source-Drain Body Diode Characteristics T J=25℃unless otherwi specified
Note:
[1] T J=+25℃to +150℃ .
[2] Silicon limited current only.
缓慢反义词
神游科技[3] Package limited current.
[4] Repetitive rating; pul width limited by maximum junction temperature.
[5] Pul width≤380µs; duty cycle≤2%.
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