专利名称：Graded buffer epitaxy in aspect ratio怎么新建文件
trapping
日食发明人：Cheng-Wei Cheng,Amlan Majumdar,Kuen-
Ting Shiu,Jeng-Bang Yau
奖牌怎么画申请号：US14974590
申请日：20151218
公开号：US09496347B1
公开日：
20161115
专利内容由知识产权出版社提供
专利附图：
如何跟领导请假摘要：A method of forming a miconductor device includes: providing a patterned structure comprising a silicon substrate and dielectric stacks deposited on the silicon
substrate, the dielectric stacks forming trenches exposing a plurality of surface portions of the substrate within the trenches; forming one or more epitaxial buffer layers within the trenches on the expod surface portions of the substrate; and growing a miconductor material on the epitaxial buffer layer that is the furthest away from the substrate; wherein each of the one or more epitaxial buffer layers and the miconductor material has less than about 3% lattice mismatch to the layer immediately beneath the one or more epitaxial buffer layer and the miconductor material.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
广告类型代理机构：Cantor Colburn LLP
企业的愿景代理人：Louis Percello
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