Ballast Application for 4 x T5 54W with ICB1FL02G
Electrical and Thermal Loads with
Inverter- and PFC- Gate Driver Current-Limitation
I Introduction
The Infineon Smart Ballast Controller provides high performance and accuracy at low system costs and minimum current consumption. For the Power-MOSFET-Gate-Drivers maximum values of the source- and sink-currents are specified.
In Fluorescent Lamp Ballasts with input powers of about 100W operating Single or Duo Fluorescent Lamps typical MOSFET-Gate-Charges of 10nC to 20nC ari. High Power Ballasts like for 4 x T5 54W need transistors having Gate-Charges with 50nC to 100nC. For applications with low Gate-Charges a low ohmic Gate-Resistor is sufficient.
For High Power applications having incread MOSFET-Gate-Charges it is necessary to have different current paths for rather slow switching-on at low source currents and a faster switching-off at higher sink currents at the Gate Driver respectively.
避孕药牌子
In the ca of the Half-Bridge-Transistors an additional clearing diode with parallel resistor is propod.
罗马帝国版图A fast discharge of the further incread Gate-Charge like arising in the PFC-MOSFET can be arranged with a bypassing current path through an additional external Bipolar Transistor.
The following results show that with Gate-Driver-Currents keeping the specified range low switching loss are achievable fulfilling the requirements of high-efficient Fluorescent-Lamp-Ballasts.
II Inverter
Fig. 1 Inverter Low Side MOSFET:
Gate- Source Voltage ( blue, 5V / div. ) Gate- Driver- Current
( red, 50mA / div. )
Results:
Max. Gate-Driver-Currents measured : I + = 50mA , I - = - 230mA
Gate-Driver-Currents acc. Datasheet : I + = 50mA , I - = - 300mA
Conditions:
Uin = 230V, Pin = 237W , Pout = 221W, f = 64kHz, Efficiency = 93% Ambient Temperature Ta =
27°C宣传活动
Low Side MOSFET 11N60C3, TO220 free standing TL = 62°C , ∆TL = 35K High Side MOSFET 11N60C3, TO220 free standing TH = 62°C , ∆TL = 35K Gate Driver Circuit with clearing diode acc. enclod schematic and BOM
事后控制
Fig. 2 Inverter Low Side – Switch-On-Pha ( time scale 1us ) : Gate- Source Voltage ( blue, 5V / div. )
Gate- Driver- Current ( red, 50mA / div. )
Fig. 3 Inverter Low Side – Switch-Off-Pha ( time scale 1us ) : Gate- Source Voltage ( blue, 5V / div. )
Gate- Driver- Current ( red, 50mA / div. )
III PFC
Fig. 4 PFC MOSFET – Switching :
Gate- Source Voltage ( blue, 5V / div. ) Gate-Driver Current ( red, 50mA / div. )
Results:
Max. Gate-Driver-Currents measured : I + = 100mA , I - = - 50mA
Gate-Driver-Currents acc. Datasheet : I + = 100mA , I - = - 500mA形容悲伤的成语
Frequency-Range measured : 70 kHz @ U line = 325V
160 kHz @ U line = 325V / 2
190 kHz @ U line = 0
Conditions:
Uin = 230V, Pin = 237W , Pout = 221W, f = 64kHz, Efficiency = 93% Ambient Temperature Ta =
27°C PFC MOSFET 20N60C3, TO220 free standing Tp = 59°C , ∆TL = 32K Gate Driver Circuit with unloading switch acc. enclod schematic and BOM
Fig. 5 PFC MOSFET – Switch-On-Pha ( time scale 500ns ) : Gate- Source Voltage ( blue, 5V / div. )
Gate-Driver Current ( red, 50mA / div. )
Fig. 6 PFC MOSFET – Switch-Off-Pha ( time scale 500ns ) : Gate- Source Voltage ( blue, 5V / div. )
Gate-Driver Current ( red, 50mA / div. )
可以为你
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谢谢老师
