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Low Noi, Cascadable
Silicon Bipolar MMIC Amplifier Technical Data
Features
•Cascadable 50 Ω Gain Block •Low Noi Figure:
2.6 dB Typical at 1.5 GHz •High Gain:
25 dB Typical at 1.5 GHz • 3 dB Bandwidth:DC to 2.5 GHz •Unconditionally Stable (k>1)•Low Power Dissipation:10 mA Bias •Low Cost Plastic Package
INA-03184
84 Plastic Package
Description
The INA-03184 is a low-noi silicon bipolar Monolithic Micro-wave Integrated Circuit (MMIC)
Typical Biasing Configuration
V CC
RF IN
RF OUT
1.VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noi Amplifiers.
feedback amplifier houd in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noi IF or RF amplification with minimum power consumption.
The INA ries of MMICs is
fabricated using HP’s 10 GHz f T ,25␣GHz f MAX , ISOSAT™-I silicon bipolar process which us nitride lf-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielec-tric and scratch protection to achieve excellent performance,uniformity and reliability.
5965-9678E
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INA-03184 Absolute Maximum Ratings
Parameter
Absolute Maximum [1]
Device Current
25 mA Power Dissipation [2]200 mW RF Input Power
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+13 dBm Junction Temperature 150°C Storage Temperature
–65 to 150°C
Thermal Resistance:
θjc = 100°C/W
Notes:
1.Permanent damage may occur if any of the limits are exceeded.
2.Derate at 10 mW/°C for T C > 130°C.
INA-03184 Part Number Ordering Information
Part Number No. of Devices
Container INA-03184-TR110007" Reel INA-03184-BLK
100
Antistatic Bag
For more information, e “Tape and Reel Packaging for Semiconductor Devices”.
G P Power Gain (|S 21|2) f = 1.5 GHz dB 23.0
25.0∆G P Gain Flatness f = 0.1 to 2.0 GHz
dB ±0.8f 3 dB 3 dB Bandwidth [2]GHz 2.5I SO Rever I solation (|S 12|2) f = 1.5 GHz dB
35I nput VSWR f = 0.01 to 2.0 GHz 2.0:1Output VSWR f = 0.01 to 2.0 GHz 3.0:1[3]
绿野仙境NF 50 Ω Noi Figure
f = 1.5 GHz dB 2.6P 1 dB Output Power at 1 dB Gain Compression f = 1.5 GHz dBm –2.0IP 3Thi
rd Order Intercept Point f = 1.5 GHz dBm 7t D Group Delay f = 1.5 GHz pc 210V d Device Voltage
V 3.0
4.0
5.0
dV/dT
Device Voltage Temperature Coefficient
mV/°C
+4
Notes:
1.The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is on the following page.
2.Referenced from 10 MHz Gain (G P ).
3.VSWR can be improved by bypassing a 100–200 Ω bias resistor directly to ground. See AN-S012: MagIC Low Noi Amplifiers.
INA-03184 Electrical Specifications [1], T A = 25°C
Symbol
Parameters and Test Conditions: I d = 10 mA, Z O = 50 Ω
Units
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Min.
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Max.
VSWR
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INA-03184 Typical Scattering Parameters (Z O = 50 Ω, T A = 25°C, I d = 10 mA)
Freq.GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.05.3217925.619.14–3–37.1.0143.550 1.480.10.3217625.619.05–7–37.1.0144.57–3 1.450.20.3217225.619.05–14–37.1.0146.55–5 1.480.40.32165 2.518.78–29–37.1.01410.53–11 1.530.60.3215825.418.71–43–36.5.01511.51–14 1.490.80.3215125.418.53–57–36.5.01513.51–17 1.501.00.3214425.218.18–72–35.9.01621.50–20 1.461.20.3013525.218.27–86–35.9.01625.50–23 1.461.40.3112625.218.10–102–35.4.01730.49–29 1.421.60.3011725.117.92–117–34.9.01838.48–34 1.381.80.2610224.917.49–135–34.4.01944.45–41 1.392.00.229224.416.62–153–34.0.02049.40–50 1.442.50.099122.212.88168–33.6.02157.26–48 1.873.00.1416018.98.79134–32.8.02365.22–33 2.403.50.2415115.4 5.92108–32.0.02569.26–33 3.014.00.2913912.4 4.1887–30.8.02981.28–43 3.52
Note:
1.S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS ction.
S 11S 21S 12 S 22INA-03184 Typical Performance, T A = 25°C
(unless otherwi noted)
FREQUENCY (GHz)FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noi Figure vs. Frequency.
G p (d B )
3.0
2.0
24
252627–25
+25
+85
0.1
0.20.5 2.01.0 5.0
0.1
0.20.5 2.01.0 5.0
N F (d B )大芥菜
G p (d B )
TEMPERATURE (°C)Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs.
CaTemperature, f = 1.5 GHz, I d = 10 mA.
84 Plastic Package Dimensions
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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