SS9013NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a =25°C unless otherwi noted
Electrical Characteristics T a =25°C unless otherwi noted
h FE Classification
Symbol
Parameter Ratings Units V CBO
Collector-Ba Voltage 40V V CEO
Collector-Emitter Voltage 20V V EBO
第七次全国少代会
中考加油Emitter-Ba Voltage 5V I C
Collector Current 500mA P C
Collector Power Dissipation 625mW T J
Junction Temperature 150°C T STG Storage Temperature -55 ~ 150°C Symbol
Parameter Test Condition Min.Typ.Max.Units BV CBO
Collector-Ba Breakdown Voltage I C =100µA, I E =040V BV CEO
Collector-Emitter Breakdown Voltage I C =1mA, I B =020V BV EBO
Emitter-Ba Breakdown Voltage I E =100µA, I C =05V I CBO
Collector Cut-off Current V CB =25V, I E =0100nA I EBO
Emitter Cut-off Current V EB =3V, I C =0100nA h FE1h FE2
DC Current Gain V CE =1V, I C =50mA V CE =1V, I C =500mA 6440120120202V CE (sat)
Collector-Emitter Saturation Voltage I C =500mA, I B =50mA 0.160.6V V BE (sat)
Ba-Emitter Saturation Voltage I C =500mA, I B =50mA 0.91 1.2V V BE (on)Ba-Emitter On Voltage V CE =1V, I C =10mA 0.60.670.7V Classification
D E F G H h FE1
64 ~ 9178 ~ 11296 ~ 135112 ~ 166144 ~ 202
1. Emitter
乌鲁木齐到伊犁2. Ba
3. Collector
SS9013
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
•
High total power dissipation. (P T =625mW)•
High Collector Current. (I C =500mA)•
Complementary to SS9012•Excellent h FE linearity.
TO-92
1
SS9013
SS9013囧男孩
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Product Status Definition Advance Information Formative or In
Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor rerves the right to make
changes at any time without notice in order to improve
design.
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Semiconductor rerves the right to make changes at
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