DESCRIPTION
·DC Current Gain-
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:h FE=25(Min)@I C=-1.5A
·Collector-Emitter Sustaining Voltage-
:V CEO(SUS)=-100V(Min)
·Complement to Type TIP35C
·Current Gain-Bandwidth Product-
我的妈妈在哪里:f T=3.0MHz(Min)@I C=-1.0A
APPLICATIONS
·
Designed for u in general purpo power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T a=25℃)
SYMBOL PARAMETER VALUE UNIT V CBO Collector-Ba Voltage-100V V CEO Collector-Emitter Voltage-100V V EBO Emitter-Ba Voltage-5V
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I C Collector Current-Continuous-25A
电流的计算公式I CM Collector Current-peak-40A
I B Ba Current-5A
P C Collector Power Dissipation@T C=25℃125W T j Junction Temperature150℃T stg Storage Temperature Range-65~150℃
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THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Ca 1.0℃/W
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ELECTRICAL CHARACTERISTICS
T C=25℃unless otherwi specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CEO(SUS)Collector-Emitter Sustaining Voltage I C=-30mA;I B=0-100V V CE(sat)-1Collector-Emitter Saturation Voltage I C=-15A;I B=-1.5A-1.8V V CE(sat)-2Collector-Emitter Saturation Voltage I C=-25A;I B=-5A-4.0V V BE(on)-1Ba-Emitter On Voltage I C=-15A;V CE=-4V-2.0V V BE(on)-2Ba-Emitter On Voltage I C=-25A;V CE=-4V-4.0V白的反义词
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I CEO Collector Cutoff Current V CE=-60V;I B=0-1.0mA
I CBO Collector Cutoff Current V CB=-100V;I E=0-0.7mA
I EBO Emitter Cutoff Current V EB=-5V;I C=0-1.0mA
h FE-1DC Current Gain I C=-1.5A;V CE=-4V25
h FE-2DC Current Gain I C=-15A;V CE=-4V1575
f T Current-Gain—Bandwidth Product I C=-1A;V CE=-10V;f test=1.0MHz3MHz
