NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE40H12 us advanced trench technology and design to provide excellent R DS(ON) with low
gate charge. It can be ud in a wide variety of applications.
General Features
● V DS =40V,I D =120A
R DS(ON) <4 m Ω @ V GS =10V R DS(ON) <7 m Ω @ V GS =4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Load switching
● Hard switched and high frequency circuits ● Uninterruptible power supply
100% UIS TESTED!
鹤冲天100% ∆Vds TESTED!
Schematic diagram
Marking and pin assignment
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE40H12 NCE40H12 TO-220-3L
-
-
-
Absolute Maximum Ratings (T C =25℃unless otherwi noted)
Parameter Symbol Limit Unit
夜间外阴瘙痒Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous
I D 120 A
Drain Current-Continuous(T C =100℃) I D (100℃) 85 A Puld Drain Current I DM 330 A Maximum Power Dissipation P D 130 W Derating factor
0.87 W/℃
Single pul avalanche energy (Note 5)
E AS 1080 mJ
Operating Junction and Storage Temperature Range
T J ,T STG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ca (Note 2)
R θJC
1.15
/W ℃
Electrical Characteristics (T C =25℃unless otherwi noted)
Parameter
Symbol
Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 40 45 - V Zero Gate Voltage Drain Current I DSS V DS =40V,V GS =0V -
- 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage
V GS(th) V DS =V GS ,I D =250μA 1.2 1.9 2.5 V V GS =10V, I D =20A - 3.2 4.0
Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D
=10A - 5.5 7.0 m Ω
Forward Transconductance g FS
V DS =10V,I D =20A 26 - - S
Dynamic Characteristics (Note4) Input Capacitance C lss - 5400 - PF Output Capacitance
C oss - 970 - PF
Rever Transfer Capacitance C rss
V DS =20V,V GS =0V,
F=1.0MHz
- 380 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 15 - nS
Turn-on Ri Time t r - 18 - nS Turn-Off Delay Time t d(off) - 52 - nS
Turn-Off Fall Time t f
V DD =20V,I D =2A,R L =1Ω V GS =10V,R G =3Ω - 23 - nS
wps取消隐藏Total Gate Charge Q g - 75 nC
Gate-Source Charge Q gs - 10.5 nC
Gate-Drain Charge
ppt如何插入视频Q gd V DS =20V,I D =20A,
V GS =10V基础教育调查报告
- 17 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD
V GS =0V,I S =40A -
1.2 V Diode Forward Current (Note 2)
I S - - 120 A Rever Recovery Time t rr - 42 - nS Rever Recovery Charge Qrr TJ = 25°C, IF = 40A
di/dt = 100A/μs (Note3)
- 45 - nC
搞笑笑话大全
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pul width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 c.
3. Pul Test: Pul Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E AS condition : Tj=25℃,V DD =20V,V G =10V,L=1mH,Rg=25Ω，I AS =4
6.5A
花费英语单词NCE40H12
Pb Free Product
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Test circuit
1) E AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
I D - Drain Current (A)
Figure 3 Rdson- Drain Current
T J -Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Qg Gate Charge (nC)
Figure 5 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
R d s o n O n -R e s i s t a n c e (m Ω)
I D - D r a i n C u r r e n t (A )
I D - D r a i n C u r r e n t (A )
N o r m a l i z e d O n -R e s i s t a n c e
V g s G a t e -S o u r c e V o l t a g e (V )
I s - R e v e r s e D r a i n C u r r e n t (A )
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
萨博93
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
T J -Junction Temperature (℃)
Figure 9 Power De-rating
T J -Junction Temperature(℃)
Figure 10 V GS(th) vs Junction Temperature
I D - D r a i n C u r r e n t (A )
C C a p a c i t a n c e (p F )
Square Wave Plu Duration(c)
Figure 11 Normalized Maximum Transient Thermal Impedance
r (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
P o w e r D i s s i p a t i o n (W )
