专利名称：System for controlling transistor spacer
width
发明人：Anthony J. Toprac,John R. Behnke,Matthew
Purdy
申请号：US09602045兰台内外
申请日：20000623思乡之情
公开号：US06409879B1
公开日：
空调功能图标介绍
20020625
专利内容由知识产权出版社提供为什么手机充电慢
专利附图：
摘要：A method for controlling spacer width in a miconductor device is provided. A substrate having a gate formed thereon is provided. An insulative layer is formed over at混血豺王读后感
蒜苔怎么炒least a portion of the substrate. The insulative layer covers the gate. The thickness of the insulative layer is measured. A portion of the insulative layer to be removed is determined bad on the measured thickness of the insulative layer. The portion of the insulative layer is removed to define a spacer on the gate. A processing line for forming a spacer on a gate dispod on a substrate includes a deposition tool, a thickness metrology tool, and automatic process controller, and a spacer etch tool. The deposition tool is adapted to form an insulative layer over at least a portion of the substrate. The insulative layer covers the gate. The thickness metrology tool is adapted to measure the thickness of the insulative layer. The automatic process controller is adapted to determine a portion of the insulative layer to be removed bad on the measured thickness of the insulative layer. The spacer etch tool is adapted to remove the portion of the insulative layer to define a spacer on the gate.
尽职的意思申请人：ADVANCED MICRO DEVICES, INC.
唠叨的近义词
代理机构：Williams, Morgan & Amerson, P.C.
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