D IGIT AL A UDIO D RIVER WITH D ISCRET
E D EAD -TIME AND P ROTECTION
Product Summary
V SUPPL Y 200V max.I O +/-1A / 1.2A typ.
Selectable Dead Time
15/25/35/45ns typ.Prop Delay Time 70ns typ.
Bi-directional Over Current Sensing
Features
•200V high voltage ratings deliver up to 1000W
output power in Class D audio amplifier applications
•Integrated dead-time generation and bi-directional over current nsing simplify design
•Programmable compensated pret dead-time for improved THD performances over temperature •High noi immunity
•Shutdown function protects devices from overload conditions
IRS20124S(PbF)
消防安全宣传标语
Symbol
巡店Definition
Min.
Max.
Units
V B High side floating supply voltage -0.3220V V s High side floating supply voltage VB-20VB+0.3V V HO High side floating output voltage Vs-0.3VB+0.3V V CC Low side fixed supply voltage -0.320V V LO Low side output voltage -0.3Vcc+0.3V V IN Input voltage
-0.3Vcc+0.3V V OC OC pin input voltage
-
0.3Vcc+0.3V V OCSET1 OCSET1 pin input voltage -0.3Vcc+0.3V V OCSET2OCSET2 pin input voltage
-0.3Vcc+0.3V dVs/dt Allowable Vs voltage slew rate
-50V/ns Pd Maximum power dissipation
- 1.25W Rth JA Thermal resistance, Junction to ambient -100°C/W T J Junction Temperature -150°C T S Storage Temperature
-55150°C
T L
Lead temperature (Soldering, 10 conds)
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五指毛桃猪骨汤
300
°C
踪迹的近义词
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Description
The IRS20124S is a high voltage, high speed power MOSFET driver with internal dead-time and shutdown functions specially designed for Class D audio amplifier applications.厦门游攻略及费用
The internal dead time generation block provides accurate gate switch timing and enables tight dead-time ttings for better THD performances.
In order to maximize other audio performance characteristics, all switching times are designed for immunity from external disturbances such as VCC perturbation and incoming switching noi on the DT pin. Logic inputs are compatible with LSTTL output or standard CMOS down to 3.0V without speed degradation. The output drivers feature high current buffers capable of sourcing 1.0A and sink
ing 1.2A. Internal delays are optimized to achieve minimal dead-time variations. Proprietary HVIC and latch immune CMOS technologies guarantee operation down to Vs= –4V, providing outstanding capabilities of latch and surge immunities with rugged monolithic construction.
Recommended Operating Conditions
For Proper operation, the device should be ud within the recommended conditions. The Vs and COM offt ratings are tested with all supplies biad at 15V differential.
白带减少
Symbol Definition Min.Max.Units V B High side floating supply absolute voltage Vs+10Vs+18V V S High side floating supply offt voltage Note 1200V
V V HO High side floating output voltage Vs V
B V C
C Low side fixed supply voltage1018V V LO Low side output voltage0VCC V V IN Logic input voltage0VCC V V OC OC pin input voltage0VCC V V OCSET1OCSET1 pin input voltage0VCC V V OCSET2OCSET2 pin input voltage0VCC V T A Ambient Temperature-40125°C
Dynamic Electrical Characteristics
V BIAS (V CC, V BS) = 15V, C L = 1nF and T A = 25°C unless otherwi specified. Figure 2 shows the timing definitions.
IRS20124S(PbF)
重庆市内景点
Lead Definitions
Symbol Description
VCC Low side logic Supply voltage VB High side floating supply HO High side output
VS High side floating supply return
IN
Logic input for high and low side gate driver outputs (HO and LO), in pha with HO
DT/SD Input for programmable dead-time, referenced to COM. Shutdown LO and HO when tied to COM COM Low side supply return
LO Low side output
OC Over current output (negative logic)
OC SET1Input for tting negative over current threshold OC SET2
Input for tting positive over current threshold
