专利名称：HIGH-PURITY SILICON CARBIDE POWDER AND PREPARATION METHOD THEREFOR 发明人：BURLACHENKO, Yevhen，布乐琴科耶夫亨
申请号：CN2018/123721
申请日：20181226
家庭情况调查表乌鸦坐飞机公开号：WO2020/103280A1
公开日：
20200528
青椒洋芋丝
专利内容由知识产权出版社提供
摘要：A high-purity silicon carbide powder and a preparation method therefor, which relate to the field of miconductor material preparation. Said preparation method for the high-purity silicon carbide powder compris: oxidizing high-purity carbon powder, and providing a silica protective layer for the high-purity silicon powder to improve inertia of the silicon powder, so that the temperature for removing impurities from a material mixture is incread, the nitrogen desorption temperature upper limit is incread, nitrogen adsorbed in the material mixture is further desorbed, and the objective of reducing the content of nitrogen in the high-purity silicon carbide powder is achieved by means of vacuum cleaning.
数字数申请人：SICC CO. , LTD.，山东天岳先进材料科技有限公司山西首富
地址：AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, High-tech District Jinan, Shandong 250100 CN，中国山东省济南市高新区新宇路西侧世纪财富中心AB座1106-6-01, Shandong 250100 CN
国籍：CN,CN
代理人：BEIJING JUNHUI INTELLECTUAL PROPERTY AGENT OFFICE (ORDINARY
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