Apparatus for initializing perpendicular MRAM devi

更新时间:2023-06-30 15:25:12 阅读: 评论:0

专利名称:Apparatus for initializing perpendicular
MRAM device
发明人:Yuchen Zhou
申请号:US14219990
贺年申请日:20140319电饭锅面包
公开号:US09117532B2
优秀党员事迹
公开日:
20150825
成长不烦恼
专利内容由知识产权出版社提供
专利附图:
摘要:The prent invention is directed to an apparatus for initializing perpendicular magnetic tunnel junction. The apparatus compris a permanent magnet for generating a magnetic flux; a flux concentrator made of a soft ferromagnetic material and having a
ba area in contact with the permanent magnet and an tip area that is smaller than the ba area, thereby funneling and concentrating the magnetic flux to the tip area for emitting a magnetic field therefrom; and a means for supporting and conveying a substrate with an arrays of magnetic tunnel junctions formed therein to traver the magnetic field in clo proximity to the tip area. The apparatus may further include at least one of the following: a substrate heater, a flux containment structure coupled to the permanent magnet, and a magnetic imaging plate dispod in proximity to the substrate on the opposite side from the flux concentrator.
申请人:Avalanche Technology Inc.
以言举人地址:Fremont CA US
国籍:US
形容口才好的词语代理人:Bing K. Yenexcel使用技巧大全
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