7.5-22.5/15.0-45.0 GHz Active Doubler +17 dBm Output Power
-30 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant
100% RF, DC and Output Power Testing
Features
Electrical Characteristics (Ambient T emperature T = 25 o C)
Parameter
Input Frequency Range (fin)Output Frequency Range (fout)Input Return Loss (S11)Output Return Loss (S22)
Saturated Output Power (Psat)RF Input Power (RF Pin)Fundamental Leakage (fin)Third Harmonic Leakage (3xfin)Fourth Harmonic Leakage (4xfin)Bias Voltage (Vcc)Supply Current
Units GHz GHz dB dB dBm dBm dBc dBc dBc VDC mA Min.7.515.0---0.0-----Typ.---15-7+17----+5.0125Max.22.545.0---+10.0-30TBD TBD +5.5140April 2006 - Rev 28-Apr-06
Drain Bias Voltage (Vd1,2)Gate Bias Voltage (Vg1)Gate Bias Voltage (Vg2)
Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V, Vg2=0.0V Typical)Source Voltage (Vss)Source Current (Iss)
VDC VDC VDC mA VDC mA --1.2-1.2--5.525+5.0-0.60.0220-5.050+5.5+0.1+0.1250-2.060
Absolute Maximum Ratings
Supply Voltage (Vd)Supply Voltage (Vss)Supply Current (Id)Supply Current (Iss)Gate Bias Voltage (Vg)Input Power (RF Pin)
Storage Temperature (Tstg)Operating Temperature (Ta)Channel Temperature (Tch)
+6.0 VDC -6.0 VDC 300 mA 60 mA +0.3 VDC +12.0 dBm -65 to +165 O C -55 to MTTF Table MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
幼儿园美术课程1Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active doubler delivers + 17 dBm of output power. The device combines an active doubler with an output buffer amplifier that delivers constant
power over a range of input powers. The device has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This device us Mimix Broadband's 0.15 GaAs pHEMT device model technology to ensure high reliability and uniformity. The device comes in a low-cost 3x3mm QFN Surface Mount Plastic Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Point-to-Point Radio,
Microwave, LMDS, SATCOM and VSAT applications.
General Description
Doubler Measurements
7.5-22.5/15.0-45.0 GHz Active Doubler
Pout for P in = 0 to 10dBm -30
-20
-10
10
20
30
7
9
11
13
15
17
19
21
23
25
Fin (GH z)
P o u t (d B m )
1
Power Sweep for Fin = 10GHz -30
-25-20-15-10-505
10152025-15
-10
-5
05
10
15
Pin (dB m)
P o u t (d B m )
1
1. Measured results taken at room temperature in 40 GHz connectorized test fixture with no de-embedding.
April 2006 - Rev 28-Apr-06
Doubler Measurements (cont.)
7.5-22.5/15.0-45.0 GHz Active Doubler
April 2006 - Rev 28-Apr-06
* Measured on-wafer with die version of doubler.
* Measured on-wafer with die version of doubler.
7.5-22.5/15.0-45.0 GHz Active Doubler (Note: Engineering designator is 40DBL0458QT)
Package Dimensions
地黄的功效April 2006 - Rev 28-Apr-06
XX1000-QT wwwwwww P xxxx G
Top View
Bottom View
Pin 3 5 6 7 10 13 15Description
RF In
Vg1
Vss
Vg2
铅笔盒的英语单词
RF Out
Vd2
Vd1
7.5-22.5/15.0-45.0 GHz Active Doubler
App Note [1] Biasing - It is recommended to parately bias each doubler stage with Vd(1,2)=5.0V with Id1=80mA and Id2=140mA and Vss=-5.0V with Iss=50mA. XX1000-QT provides good performance at reduced bias with Vss=-2.0V and Iss=25mA. Maximum output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be ud at high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to u active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational a
品质提升mplifier, with a low value resistor in ries with the drain supply ud to n the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and Vg2=0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to quence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
MTTF T ables (TBD)牵牛花的花语
The numbers were calculated bad on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius猪皮能吃吗
deg Celsius
简爱图片
FITs
E+
E+
春卷的制作方法
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions: Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
April 2006 - Rev 28-Apr-06 Functional Schematic
Top View
PCB Layout
7.5-22.5/15.0-45.0 GHz Active Doubler
April 2006 - Rev 28-Apr-06
Application Circuit
RF In RF Out
Vd1
Vd2
Vg1Vss
Vg2
