专利名称：Gate stacks为什么要放鞭炮
发明人：Dale W. Martin,Steven M. Shank,Michael C.
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Triplett,Deborah A. Tucker
柏联温泉申请号：US10711742
申请日：20041001
公开号：US07157341B2
公开日：
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专利附图：
摘要：A structure and fabrication method for a gate stack ud to define source/drain regions in a miconductor substrate. The method compris (a) forming a gate dielectric layer on top of the substrate, (b) forming a gate polysilicon layer on top of the gate
dielectric layer, (c) implanting n-type dopants in a top layer of the gate polysilicon layer, (d) etching away portions of the gate polysilicon layer and the gate dielectric layer so as to form a gate stack on the substrate, and (e) thermally oxidizing side walls of the gate stack with the prence of a nitrogen-carrying gas. As a result, a diffusion barrier layer is formed at the same depth in the polysilicon material of the gate stack regardless of the doping concentration. Therefore, the n-type doped region of the gate stack has the same width as that of the undoped region of the gate stack.
温暖作文400字
申请人：Dale W. Martin,Steven M. Shank,Michael C. Triplett,Deborah A. Tucker
地址：Hyde Park VT US,Jericho VT US,Colchester VT US,Westford VT US
国籍：US,US,US,US
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代理机构：Schmeir, Oln & Watts
代理人：William D. Sabo
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