IRFP150N
舒泌通HEXFET ® Power MOSFET修理工的一天
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for u in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the u of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package
becau of its isolated mounting hole.
l Advanced Process Technology l Dynamic dv/dt Rating
l 175°C Operating Temperature l Fast Switching
l
Fully Avalanche Rated
Description
1
PD- 91503C
Parameter
Max.
原创散文Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 42I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 30A I DM
Puld Drain Current 140P D @T C = 25°C Power Dissipation 160W Linear Derating Factor 1.1W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pul Avalanche Energy 420mJ I AR Avalanche Current威海游记
22A E AR Repetitive Avalanche Energy 16mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 conds 300 (1.6mm from ca )°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units茶叶有什么功效
崇洋媚外
R q JC Junction-to-Ca
–––0.95R q CS Ca-to-Sink, Flat, Gread Surface 0.24–––°C/W
R q JA
放屁臭什么原因Junction-to-Ambient
–––
40
Thermal Resistance
IRFP150N
IRFP150N
工程档案管理
IRFP150N
IRFP150N
