专利名称：REDUCING DISTURBS WITH DELAYED RAMP UP OF SELECTED WORD LINE VOLTAGE
AFTER PRE-CHARGE DURING
PROGRAMMING州字组词
发明人：CHEN, Hong-Yan,DONG, Yingda
申请号：EP18878985.3
菜豆腐>升学宴祝福语申请日：20180924多人游戏
公开号：EP3669362A1
唐朝灭亡的原因
公开日：
活动心得体会
主啊你最在乎我20200624
专利内容由知识产权出版社提供
摘要：A memory device and associated techniques for reducing hot electron injection type of disturbs of memory cells. In one approach, after a pre-charge operation, voltages of a first group of adjacent word lines comprising a lected word line (WLn) and one or more drain-side word lines of WLn are incread after voltages of remaining word lines are incread. In another approach, after the pre-charge operation, voltages of the first group of adjacent word lines are incread in steps while voltages of remaining word lines are continuously incread. In another approach, voltages of the first group of adjacent word lines are incread from a negative voltage while voltages of remaining word lines are incread from 0 V. In another aspect, the disturb countermeasures can be implemented according to the position of WLn in a multi-tier stack.
申请人：SanDisk Technologies LLC
地址：Two Legacy Town Center 6900 North Dallas Parkway Suite 325 Plano, Texas 75024 US
国籍：US
0x80070643代理机构：Dehns
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