专利名称：FINFET FORMATION USING DOUBLE
PATTERNING MEMORIZATION
发明人：Chang Seo PARK,Linus JANG,Jin CHO
申请号：US13682769健康标语
总经理培训课程申请日：20121121
公开号：US20140141605A1
公开日：雪天开车
论语侍坐20140522
带有动物的诗句专利内容由知识产权出版社提供
专利附图：
摘要：Approaches for forming a FinFET device using double patterning memorization techniques are provided. Specifically, a device will initially be formed by defining a t of fins, depositing a poly-silicon layer, and depositing a hardmask. Thereafter, a front end of
妥当the line (FEOL) lithography-etch, lithography-etch (LELE) process will be performed to form a t of trenches in the device. The t of trenches will be filled with an oxide layer that is subquently polished. Thereafter, the device is lectively etched to yield a (e.g., poly-silicon) gate pattern.臭芙蓉
申请人：GLOBALFOUNDRIES INC.
地址：Grand Cayman KY
国籍：KY
更多信息请下载全文后查看
>工作激励
