专利名称：FORMATION OF BN FILM
发明人：NAGASE RYUICHI,SAKASHITA YUKIO 申请号：JP14148688毛加一笔是什么字
申请日：19880610
公开号：JPH01312073A
公开日：
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三十八军历任军长
19891215最喜欢的电影>藏红花能壮阳吗
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风尘女子摘要：PURPOSE:To easily coat the entire surface of an unheated substrate with a den high purity BN film by forming the BN film on the substrate by high temp. plasma CVD with BCl3, N2 and H2 as gaous starting materials. CONSTITUTION:A BN film is formed on a substrate (quartz member) in a furnace by high temp. plasma CVD such as high frequency induction plasma CVD with BCl3, N2 and H2 as gaous starting materials and Ar as gas tor plasma. The pref. flow rate of Ar is about 40-80l/min, that of H2 is about 0.5-6.0l/min, that of N2 is about 0.5-6.0l/min and that of BCl3 is about 10-50l/min. The desirable plate voltage is about 6-7kV and the desirable internal pressure of the furnace is about >=600Torr. It is not necessary to heat the substrate and a BN film having further improved transparency is formed by cooling the substrate.黄石面积
申请人：NIPPON MINING CO LTD
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