PROFET ® BTS 410 E2
Smart Highside Power Switch
Features
• Overload protection • Current limitation
• Short circuit protection • Thermal shutdown
• Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Rever battery protection 1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input
• Loss of ground and loss of V bb protection • E lectro s tatic d ischarge (ESD ) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All type
s of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fus and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
1) With external current limit (e.g. resistor R GND =150 Ω) in GND connection, resistors in ries with IN and ST
connections, rever load current limited by connected load.
Product Summary Overvoltage protection V bb(AZ) 65V Operating voltage V bb(on) 4.7 ... 42V On-state resistance R ON 220m ΩLoad current (ISO) I L(ISO) 1.8A Current limitation
I L(SCr) 5A
5
Standard 1
5
Straight leads
Pin Symbol Function
1 GND
-
Logic
ground
2 IN I Input, activates the power switch in ca of logical high signal
3 V bb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L)
O Output to the load
Maximum Ratings at T j = 25 °C unless otherwi specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection e page 3) V bb 65V
Load dump protection2)V LoadDump = U A + V s, U A = 13.5 V
R I3)= 2 Ω, R L= 6.6 Ω, t d= 400 ms, IN= low or high
V Load dump4)100V
Load current (Short circuit current, e page 4) I L lf-limited A
龙缸景区Operating temperature range Storage temperature range T j
T stg
-40 ...+150
-
55 ...+150
°C
Power dissipation (DC), T C≤ 25 °C P tot 50W Inductive load switch-off energy dissipation, single pul
V bb =12V, T j,start =150°C, T C =150°C const.
I L =1.8A, Z L=2.3H, 0 Ω: E AS 4.5J
Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993V ESD1
2
kV
Input voltage (DC) V IN-0.5 (6)
Current through input pin (DC) Current through status pin (DC) e internal circuit diagrams page 6I
IN
I ST
±5.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol
Values
Unit
min typ max
Thermal resistance chip - ca:
junction - ambient (free air):R thJC
R thJA
--
头部轻伤鉴定标准--
--
--
2.5
75
K/W
SMD version, device on PCB5): -- 35 --
2)Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in ries with the status pin. A resistor for the protection of the input is integrated.
3) R
I = internal resistance of the load dump test pul generator
4) V Load dump is tup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5)Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V bb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T j = 25 °C, V bb = 12 V unless otherwi specified min typ max
Operating Parameters
Operating voltage 6)T j =-40...+150°C: V bb(on) 4.7 --
海浴场
42V
Undervoltage shutdown T j =25°C:
T j =-40...+150°C: V bb(under) 2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart T j =-40...+150°C: V bb(u rst) --
--
4.9V Undervoltage restart of charge pump
e diagram page 13
抽象反义词V bb(ucp)-- 5.6 6.0V
Undervoltage hysteresis
∆V bb(under) = V bb(u rst) - V bb(under)
∆V bb(under)-- 0.1 --V Overvoltage shutdown T j =-40...+150°C: V bb(over) 42 --
52V Overvoltage restart T j =-40...+150°C: V bb(o rst)40 -- --V Overvoltage hysteresis T j =-40...+150°C:∆V bb(over)-- 0.1 --Viphone7上市时间
Overvoltage protection7) T j =-40...+150°C: I bb=4 mA V bb(AZ) 65
70--V
Standby current (pin 3)T j=-40...+25°C: V IN=0T j= 150°C: I bb(off) --
--
10
18
15
25
µA
Leakage output current (included in I bb(off))
V IN=0
I L(off)-- -- 20µA
Operating current (Pin 1)8), V IN=5 V,
T j =-40...+150°C
I GND-- 1 2.1mA
6) At supply voltage increa up to V bb= 5.6 V typ without charge pump, V OUT≈V bb - 2 V
7) Meassured without load. See also V ON(CL) in table of protection functions and circuit diagram page 7.
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)10),
(max 450 µs if V ON > V ON(SC) )
I L(SCp)
T j =-40°C:
T j =25°C: T j =+150°C: 9
--
4
--
12
--
23
--
古币价格表
15
A
Repetitive overload shutdown current limit I L(SCr)
V ON= 8 V, T j = T jt(e timing diagrams, page 11)-- 5 --A Short circuit shutdown delay after input pos. slope
V ON > V ON(SC), T j =-40..+150°C:
与雪有关的成语
min value valid only, if input "low" time exceeds 60 µs
t d(SC)-- -- 450µs
Output clamp (inductive load switch off)
at V OUT = V bb - V ON(CL)I L= 40 mA, T j =-40..+150°C: V ON(CL)6168 73V
关于成功的演讲稿
I L= 1 A, T j =-40..+150°C: ---- 75
Short circuit shutdown detection voltage
(pin 3 to 5) V ON(SC)-- 8.5 --V Thermal overload trip temperature T jt150 -- --°C Thermal hysteresis ∆T jt-- 10 --K Rever battery (pin 3 to 1) 11)-V bb --
--
32V Diagnostic Characteristics
Open load detection current
(on-condition)T j=-40 ..150°C: I L (OL)
2 -- 150
mA
8)Add I ST, if I ST > 0, add I IN, if V IN>5.5 V
9)Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
10)Short circuit current limit for max. duration of t d(SC) max=450 µs, prior to shutdown
11) Requires 150 Ω resistor in GND connection. The rever load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during rever current operation! Input and Status currents have to be limited (e max. ratings page 2 and circuit page 7).
Input and Status Feedback12)
Input turn-on threshold voltage T j =-40..+150°C:V IN(T+) 1.5 -- 2.4V
Input turn-off threshold voltage T j =-40..+150°C:V IN(T-) 1.0 -- --V Input threshold hysteresis ∆V IN(T)-- 0.5 --V Off state input current (pin 2), V IN = 0.4 V I IN(off) 1
--
30µA On state input current (pin 2), V IN = 5 V I IN(on)10 25 70µA Status invalid after positive input slope
(short circuit) T j=-40 ... +150°C:
t d(ST SC)-- -- 450µs
Status invalid after positive input slope
(open load) T j=-40 ... +150°C: t d(ST)300 --
1400µs
Status output (open drain)
Zener limit voltage T j =-40...+150°C, I ST = +50 uA: ST low voltage T j =-40...+150°C, I ST = +1.6 mA: V ST(high)
V ST(low)
5.0
--
6
--
--
0.4
V
12)If a ground resistor R
GND
is ud, add the voltage drop across this resistor.
