Pudo-resistor structure, a clod-loop operation

更新时间:2023-06-25 21:53:04 阅读: 评论:0

专利名称:Pudo-resistor structure, a clod-loop
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operational amplifier circuit and a bio-
potential nsor
发明人:Carolina Mora Lopez
申请号:US16176448
申请日:20181031
公开号:US10811542B2
公开日:
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专利内容由知识产权出版社提供
专利附图:
摘要:A pudo-resistor structure, compris: a first and a cond PMOS transistor or PN diode configured as two-terminal devices, wherein the positive terminal of the first PMOS transistor or PN diode is connected to the positive terminal of the cond PMOS transistor or PN diode, and wherein the negative terminal of the first PMOS transistor or PN diode is connected to an input (A) of the pudo-resistor structure and wherein the negative terminal of the cond PMOS transistor or PN diode is connected to an output玄武戴孝
(C) of the pudo-resistor structure, and a dummy transistor or dummy diode connected to the input (A), wherein the dummy transistor or dummy diode is further connected to a bias voltage for compensating a leakage current through the first and the cond PMOS transistors or PN diodes. A clod-loop operational amplifier circuit comprising the
pudo-resistor structure is provided. Also, a bio-potential nsor comprising the clod-爱乐之城豆瓣
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loop operational amplifier circuit is provided.
申请人:IMEC VZW
地址:Leuven BE
雪肤莱国籍:BE
代理机构:Mor Taboada
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