专利名称：HIGH RESISTANCE POLY RESISTOR
发明人：Mahalingam Nandakumar
申请号：US16800002
天气预报符号申请日：20200225
公开号：US20200279905A1
公开日：
20200903
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专利附图：
摘要：An integrated circuit includes a polysilicon resistor having a plurality of
gments, including first, cond and third gments, the cond gment located between and running about parallel to the first and third gments. A first header
connects the first and cond gments, and a cond header connects the cond and
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third gments. A first metal silicide layer located over the first header extends over the first and cond gments toward the cond header. A cond metal silicide layer located over the cond header extends over the cond and third gments toward the first header. A dielectric layer is located over and contacts the first, cond and third gments between the first and cond metal silicide layers.
梅花谷>礼仪培训心得体会申请人：TEXAS INSTRUMENTS INCORPORATED
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地址：Dallas TX US
国籍：US
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