专利名称：RESISTOR FOR CRYOGENIC CIRCUIT AND MANUFACTURE OF THE SAME
发明人：TARUYA YOSHINOBU,YANO
SHINICHIRO,HATANO YUJI,HIRANO
智能手机价钱
MIKIO,MORI HIROYUKI
陕柴中学申请号：JP20452885婚礼答谢宴
申请日：19850918
公开号：JPS6265487A
登高壮观天地间
公开日：
19870324
汤圆的做法大全专利内容由知识产权出版社提供
紫菜海带汤摘要：PURPOSE:To obtain a resistor which has excellent durability and heat resistant properties, is free from characteristics degradation caud by aging and provides required resistance value by a method wherein crystalline (single-crystalline or polycrystalline) insulating material or miconductor such as Al2O3, SiO2 or MgO, who thermal conductivity at the temperature of liquid helium is 1W/cm.K, which is equal to that of metallic material, is employed to improve heat conduction properties by lattice vibration at a low temperature. CONSTITUTION:An Nb film 2 for magnetic shield is formed on a silicon wafer 1, which is not subjected to heat oxidization, and patterned by etching with CF4 gas to form a magnetic shielding film. Then an Si film 3 for layer insulation is formed by heat vaporization by an electron beam gun under the vacuum degree of higher than 10<-5>Pa and an MoNX film 4 is formed on it by sputtering and a resist pattern as a resistance film is formed by exposure. After the part of the MoNX film which is not coated with the resist is removed by ion etching with an Ar beam, the resist on the MoNX film is removed by acetone. If the sheet resistance formed like this is
measured under the temperature of liquid helium, the deviation of the sheet resistance of the MoNX film with the width wider than 3mum is within 5% and, if the length is changed with the same width, contact resistance between the MoNX film and the Nb wiring film is 0.1OMEGA or less so that this film can be employed as a thin film for resistance of a superconductor integrated circuit.
七喜临门申请人：AGENCY OF IND SCIENCE & TECHNOL
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