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专利名称：FLOATING GATE MEMORY DEVICE 发明人：RORENZO FUARAOONE
高中历史知识点总结申请号：JP14128484落雁景区
申请日：19840706
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公开号：JPS6037779A
公开日：
臭氧催化氧化19850227
专利内容由知识产权出版社提供
摘要：A floating gate memory device includes a substrate of miconductor material having on a surface thereof a layer of insulating material. On the insulating layer is a floating gate of conductive polycrystalline silicon with the floating gate having a textured outer surface and relatively smoother sidewalls. A cond layer of insulating material extends over the outer surface and sidewalls of the floating gate. The portion of the cond insulating material over the outer surface of the floating gate has a textured surface and is thinner than the portions of the cond insulating layer over the sidewalls of the floating gate. A control gate is over the cond insulating layer and extends over the outer surface and sidewalls of the floating gate. The control gate is of conductive polycrystalline silicon and has an inner surface portion over the textured outer surface of the control gate which is textured and has undulations which substantially follow the undulations of the textured surface of the floating gate.
申请人：RCA CORP脚痛是什么原因
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