4 F2 MEMORY CELL ARRAY

更新时间:2023-06-24 19:00:16 阅读: 评论:0

专利名称:4 F2 MEMORY CELL ARRAY
发明人:Martin Popp,Till Schloesr
申请号:US12252826
申请日:20081016表格排版
得乎其中
公开号:US20100097835A1
公开日:
mmc卡
20100422竹诗词
专利内容由知识产权出版社提供
专利附图:
百日咳的百日是指摘要:An integrated circuit including a memory cell array compris active area lines,bitlines, the bitlines being arranged so that an individual one intercts a plurality of the active area lines to form bitline-contacts, respectively, the bitlines being arranged at a bitline pitch, wordlines being arranged so that an individual one of the wordlines
intercts a plurality of the active area lines, and an individual one of the wordlines intercts a plurality of the bitlines, the wordlines being arranged at a wordline pitch, wherein neighboring bitline-contacts, each of which is connected to one of the active area lines, are connected with different bitlines, and the bitline pitch is different from the wordline pitch.蒙泰罗
maya贴图
申请人:Martin Popp,Till Schloesr
地址:Dresden DE,Dresden DE蒙毅是谁
国籍:DE,DE
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