Rever conducting igbt

更新时间:2023-06-24 18:58:34 阅读: 评论:0

专利名称:Rever conducting igbt
发明人:フィルシュ, フランク ディーター,ウェーバー,ドロテーア不要讨厌我
申请号:JP2015139323序号怎么自动排序
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风起云涌的近义词申请日:20150713
白水煮虾公开号:JP6080023B2
公开日:
20170215
专利内容由知识产权出版社提供
摘要:A rever-conducting IGBT includes a miconductor body having a drift region arranged between first and cond surfaces. The miconductor body further includes first collector regions arranged at the cond surface and in Ohmic contact with a cond electrode, backside emitter regions and in Ohmic contact with the cond electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The miconductor body further includes a cond collector region of the cond conductivity type arranged at the cond surface and in Ohmic contact with the cond electrode. The cond collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first miconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes cond miconductor regions of the same conductivity type as the first miconductor regions.
申请人:インフィネオン テクノロジーズ アーゲー
印度民族构成
地址:ドイツ連邦共和国 85579 ノイビーベルク アム カンペオン 1-12
国籍:DE
代理人:園田・小林特許業務法人更多信息请下载全文后查看
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