专利名称：Semiconductor device
五月的风发明人：Takahide Tanaka,Masaharu Yamaji
申请号：US15799477骨折吃什么最好
申请日：20171031
公开号：US10367056B2
公开日：
美国旧金山
夜莺的故事
20190730
高级韩语
专利内容由知识产权出版社提供
专利附图：武当功夫
相册密码摘要：An HVJT is includes a parasitic diode formed by pn junction between an n-type diffusion region and a cond p-type paration region surrounding a periphery thereof.The n-type diffusion region is arranged between an n-type diffusion region that is a high potential side region and an n-type diffusion region that is a low potential side region,
and electrically parates the regions. In the n-type diffusion region, an nchMOSFET of a level-up level shift circuit is arranged. The n-type diffusion region has a planar layout in which the n-type diffusion region surrounds a periphery of the n-type diffusion region and a region where the nchMOSFET is arranged protrudes inwardly. A high-concentration inter-region distance L of the nchMOS region where the nchMOSFET is arranged is longer than a high-concentration inter-region distance L of the parasitic diode. Thus, the reliability of the miconductor device may be improved.
申请人：FUJI ELECTRIC CO., LTD.
地址：Kawasaki-shi, Kanagawa JP
大学生论文题目
国籍：JP
代理机构：Rabin & Berdo, P.C.
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