脑筋急转弯>前前前世罗马音专利名称：Bit line gmenting in random access
memories
发明人：David SuitWai Ma,Aiqin Chen千年一叹
接口类型
申请号：US10269005
申请日：20021010向日葵族
公开号：US20040073745A1
公开日：
20040415
湖南古镇
专利内容由知识产权出版社提供
专利附图：慧心妙舌
摘要：An integrated memory circuit and corresponding method for gmenting bit lines are provided, where the integrated memory circuit includes a n amplifier, a layered bit line in signal communication with the n amplifier, veral gment pass
transistors in signal communication with the layered bit line, veral gmented bit lines, each in signal communication with a corresponding one of the veral gment pass transistors, respectively, veral memory cell pass transistors in signal communication with one of the veral gmented bit lines, and a plurality of memory cell capacitors, each in signal communication with a corresponding one of the plurality of memory cell transistors, respectively; and where the corresponding method for gmenting bit lines includes receiving a memory cell address, activating a memory cell pass transistor with a wordline corresponding to the memory cell address, receiving a signal indicative of the memory cell charge level on a gmented bit line through the memory cell transistor, activating a gment pass transistor corresponding to the memory cell address, receiving a signal indicative of the memory cell charge level on a layered bit line through the gment pass transistor, and receiving a signal indicative of the memory cell charge level at the n amplifier through the layered bit line.
心乱如麻的图片
申请人：INFINEON TECHNOLOGIES NORTH AMERICA CORP.
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