Transistors
Rev.B 1/2
Low frequency amplifier
2SD2657
z Application
Low frequency amplifier Driver
z Features
1) A collector current is large. 2) V CE(sat) : max.350mV At I C = 1A / I B = 50mA z External dimensions (Unit : mm)
z Absolute maximum ratings (T a=25°C)
Parameter
Symbol V CBO V CEO V EBO I C I CP
P C Tj Tstg
Limits 303061.5500150−55 to +150
3∗1∗2Unit V V V A A mW 1W °C °C
Collector-ba voltage Collector-emitter voltage Emitter-ba voltage Collector current Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pul, P W =1ms
∗2 Mounted on a 25×25×
0.8mm Ceramic substrate t
z Packaging specifications
z Electrical characteristics (T a=25°C)
Parameter
Symbol Min.Typ.Max.Unit Conditions
V CB =10V, I E =0A, f =1MHz
f T −300−MHz V CE =2V, I E =−100mA, f =100MHz BV CBO 30−−V I C =10µA BV CEO 30−−V I C =1mA BV EBO 6−−V I E =10µA I CBO −−100nA V CB =30V I EBO −−100nA V EB =6V
茶花花语
V CE(sat)−140350mV I C =1A, I B =50mA h FE 270−680−V CE =2V, I C =100mA Cob −11−pF
∗∗
Collector-ba breakdown voltage Collector-emitter breakdown voltage Emitter-ba breakdown voltage Collector cutoff current Emitter cutoff current
Collector-emitter saturation voltage DC current gain
Transition frequency
Corrector output capacitance
∗ Puld
Transistors
鸡蛋手抓饼
Rev.B 2/2
z Electrical characteristic curves
我的同学
COLLECTOR CURRENT : I C (A)10D C C U R R E N T G A I N : h F E
中心论点1000
100Fig.1 DC current gain
vs. collector current
COLLECTOR CURRENT : I C (A)B A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C
E (s a t ) (V )
Fig.2 Collector-emitter saturation voltage
ba-emitter saturation voltage vs. collector current
COLLECTOR CURRENT : I C (A)
0.01C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )
0.1
1
Fig.3 Collector-emitter saturation voltage
vs. collector current
BASE TO EMITTER CURRENT : V BE (V)C O L L E C T O R C U R R E N T : I C (A )
Fig.4 Grounded emitter propagation
characteristics
EMITTER CURRENT : I E (A)10T R A N S I T I O N F R E Q U E N C Y : f T (M H z )
1000
100
Fig.5 Gain bandwidth product
vs. emitter current
COLLECTOR CURRENT : I C (A)
Fig.6 Switching time
S W I T C H I N G T I M E : (n s )nortel
110
100
1000
C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )ps添加图层
E M I T T E R I N P U T C A P A C I T A N C E : C i b (p
F )Fig.7 Collector output capacitance
vs. collector-ba voltage Emitter input capacitance vs. emitter-ba voltage
EMITTER TO BASE VOLTAGE : V EB (V)COLLECTOR TO BASE VOLTAGE : V CB (V)
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In ca of export from Japan, plea confirm if it applies to "objective" criteria or an "informed" (by MITI clau)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
猪肝菠菜汤>空调加氟利昂
