专利名称：GaN-BASED THRESHOLD SWITCHING
DEVICE AND MEMORY DIODE
发明人：Kai Fu,Houqiang Fu,Yuji Zhao
数学思考题
申请号：US17215282
申请日：20210329小熊娃娃
公开号：US20210242281A1
rf射频公开日：
晋江小说
挂钟品牌
20210805
专利内容由知识产权出版社提供思美人屈原
运动会班级介绍词
专利附图：
摘要：A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the
unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a cond electrode on a cond surface of the GaN substrate.
副作用名词解释
申请人：Kai Fu,Houqiang Fu,Yuji Zhao
地址：Tempe AZ US,Tempe AZ US,Chandler AZ US
国籍：US,US,US
更多信息请下载全文后查看
