专利名称：Semiconductor-air gap grating fabrication
using a sacrificial layer process发型男学生
生产作业计划
发明人：Michael P. Nesnidal,David V. Forbes
申请号：US10210799
申请日：20020801
公开号：US06649439B1
周庄八景
公开日：
学步鞋怎么选
20031118
专利内容由知识产权出版社提供
专利附图：
摘要：An optical device () including a first miconductor layer () on which is deposited a dielectric layer that is patterned and etched to form dielectric strips () as part of a diffraction grating layer. Another miconductor layer () is grown on the first大豆油的危害
miconductor layer () between the dielectric strips () to provide alternating dielectric ctions () and miconductor ctions. In an alternate embodiment, a dielectric layer is deposited on a first miconductor layer (), and is patterned and etched to define dielectric strips (). The miconductor layer () etched to form openings () between the dielectric strips (). A miconductor material () is grown within the openings () and then another miconductor layer () is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels ().
公共停车场
申请人：NORTHROP GRUMMAN CORPORATION
长沙一日游
代理机构：Warn, Burgess & Hoffmann, P.C.
代理人：John A. Miller, Esq.科普知识手抄报
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