Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories
期刊名称： Integrated Ferroelectrics
作者： Norga, Gerd J., Wouters, Dirk J.
年份： 2000年三年计划
期号： 第1-4期
大米绿豆粥关键词： Practical, Experimental/ ferroelectric capacitors; ferroelectric storage;
lead compounds; thin film capacitors/ stacked ferroelectric capacitor cell;
十二星座星空图
FERAM; barrier materials; bottom electrode microstructure; texture control;
蒸饺怎么蒸鱼丸怎么做circuit density; PZT; RuO 2; Pt; PbZrO3TiO3/ B2860F Ferroelectric devices B2130 Capacitors B1265D Memory circuits/ PbZrO3TiO3/int TiO3/int ZrO3/int O3/int Pb/int Ti/int Zr/int O/int PbZrO3TiO3 /ss TiO3/ss ZrO3/ss O3 /ss Pb/ss Ti/ss Zr /ss O/ss; RuO2/int O2 /int Ru/int O/int RuO2 /bin O2/bin Ru/bin O /bin; Pt/sur Pt /el
七年级作文题目摘要：A number of basic materials issues need to be solved to successfully realize the stacked ferroelectric capacitor cell concept, which is needed for FERAM with densities beyond about 1Mb. This paper discuss barrier materials lection and the role of bottom electrode microstructure for future PZT-bad FERAM bad on the stacked cell concept. Conventional methods for PZT texture control, employing Pt as a template layer, are less suited for stacked cell layouts, becau of the poor diffusion barrier properties of Pt. Modification of the microstructure of RuO2 bottom electrodes has allowed us to eliminate the effect of underlying layers on the texture of PZT. The advantages of this approach in view of increasing circuit density of PZT-bad FERAMs are discusd.
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